STPSC12065DY

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220ACFP

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STPSC12065DY

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STMicroelectronics

SILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220ACFP

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DocumentsDatasheet Product Change Notice EN +8

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STPSC12065DY

Capacitance @ Vr, F	750 pF
Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	50 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220AC
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.45 V

STPSC12065-Y Series

Automotive 650 V, TO-220 D2PAK SiC Power Schottky Diode

Part	Speed	Technology	Reverse Recovery Time (trr)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Qualification	Grade	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Package / Case	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Mounting Type	Capacitance @ Vr, F
STMicroelectronics STPSC12065DY	No Recovery Time	SiC (Silicon Carbide) Schottky	0 ns	-40 °C	175 ░C	AEC-Q101	Automotive	50 µA	1.45 V	TO-220-2	TO-220AC	650 V	12 A	Through Hole	750 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 3.20
		50	$ 2.53
		100	$ 2.17
		500	$ 2.12
Newark	Each	1	$ 4.36
		10	$ 3.66
		25	$ 3.49
		50	$ 3.39
		100	$ 3.27

Description

General part information

STPSC12065-Y Series

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in PFC applications, the STPSC12065-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.

Documents

Technical documentation and resources

Datasheet

STPSC12065DY

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STPSC12065DY

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Technical Specifications

STPSC12065-Y Series

Pricing

Description

STPSC12065-Y Series

Documents

Datasheet

Product Change Notice EN

DS11624

AN4242

AN5088

Technical Specifications

STPSC12065-Y Series