APT10SCD120BCT

Obsolete

Microsemi Corporation

DIODE ARR SIC SCHOT 1200V TO247

Search across all available documentation for this part.

Obsolete

Microsemi Corporation

DIODE ARR SIC SCHOT 1200V TO247

Technical Specifications

Parameters and characteristics for this part

Specification	APT10SCD120BCT

Current - Average Rectified (Io) (per Diode)	36 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Diode Configuration	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Technology	Current - Reverse Leakage @ Vr
Microsemi Corporation APT10SCD65KCT	650 V	0 ns	1 Pair Common Cathode	TO-220	Through Hole	1.8 V	17 A	TO-220-3	150 °C	-55 °C	No Recovery Time	SiC (Silicon Carbide) Schottky	200 µA
Microsemi Corporation APT10SCD120BCT	1.2 kV	0 ns	1 Pair Common Cathode	TO-247	Through Hole	1.8 V	36 A	TO-247-3	150 °C	-55 °C	No Recovery Time	SiC (Silicon Carbide) Schottky	200 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 1200 V 36A (DC) Through Hole TO-247-3

Technical documentation and resources