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DIODE ARR SIC SCHOT 650V TO220
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Reverse Recovery Time (trr) | Diode Configuration | Supplier Device Package | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Current - Average Rectified (Io) (per Diode) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Technology | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Microsemi Corporation | 650 V | 0 ns | 1 Pair Common Cathode | TO-220 | Through Hole | 1.8 V | 17 A | TO-220-3 | 150 °C | -55 °C | No Recovery Time | SiC (Silicon Carbide) Schottky | 200 µA |
Microsemi Corporation | 1.2 kV | 0 ns | 1 Pair Common Cathode | TO-247 | Through Hole | 1.8 V | 36 A | TO-247-3 | 150 °C | -55 °C | No Recovery Time | SiC (Silicon Carbide) Schottky | 200 µA |