APT10SCD65KCT

Obsolete

Microsemi Corporation

DIODE ARR SIC SCHOT 650V TO220

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Obsolete

Microsemi Corporation

DIODE ARR SIC SCHOT 650V TO220

Technical Specifications

Parameters and characteristics for this part

Specification	APT10SCD65KCT

Current - Average Rectified (Io) (per Diode)	17 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-220
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Diode Configuration	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io) (per Diode)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Technology	Current - Reverse Leakage @ Vr
Microsemi Corporation APT10SCD65KCT	650 V	0 ns	1 Pair Common Cathode	TO-220	Through Hole	1.8 V	17 A	TO-220-3	150 °C	-55 °C	No Recovery Time	SiC (Silicon Carbide) Schottky	200 µA
Microsemi Corporation APT10SCD120BCT	1.2 kV	0 ns	1 Pair Common Cathode	TO-247	Through Hole	1.8 V	36 A	TO-247-3	150 °C	-55 °C	No Recovery Time	SiC (Silicon Carbide) Schottky	200 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Cathode 650 V 17A Through Hole TO-220-3

Technical documentation and resources

No documents available