IDD03SG60CXTMA1

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Infineon Technologies

DIODE SIL CARB 600V 3A TO252-3

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Unknown

Infineon Technologies

DIODE SIL CARB 600V 3A TO252-3

Technical Specifications

Parameters and characteristics for this part

Specification	IDD03SG60CXTMA1

Capacitance @ Vr, F	60 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO252-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	3 A, 2.3 V

Part	Package / Case	Technology	Current - Average Rectified (Io)	Mounting Type	Speed	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr
Infineon Technologies IDD03SG60CXTMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky	3 A	Surface Mount	No Recovery Time	2.3 V 3 A	60 pF	0 ns	PG-TO252-3	175 ░C	-55 C	600 V	15 µA
Infineon Technologies IDD03SG60CXTMA2	DPAK (2 Leads + Tab) SC-63 TO-252-3	SiC (Silicon Carbide) Schottky	3 A	Surface Mount	No Recovery Time	2.3 V 3 A	60 pF	0 ns	PG-TO252-3	175 ░C	-55 C	600 V	15 µA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 3A Surface Mount PG-TO252-3

Technical documentation and resources