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DIODE SIL CARB 600V 3A TO252-3
| Part | Package / Case | Technology | Current - Average Rectified (Io) | Mounting Type | Speed | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DPAK (2 Leads + Tab) SC-63 TO-252-3 | SiC (Silicon Carbide) Schottky | 3 A | Surface Mount | No Recovery Time | 2.3 V 3 A | 60 pF | 0 ns | PG-TO252-3 | 175 ░C | -55 C | 600 V | 15 µA |
Infineon Technologies | DPAK (2 Leads + Tab) SC-63 TO-252-3 | SiC (Silicon Carbide) Schottky | 3 A | Surface Mount | No Recovery Time | 2.3 V 3 A | 60 pF | 0 ns | PG-TO252-3 | 175 ░C | -55 C | 600 V | 15 µA |