TLE2161AIDR
ActiveTexas Instruments
SINGLE, 36-V, 6.4-MHZ OPERATIONAL AMPLIFIER
Deep-Dive with AI
Search across all available documentation for this part.
TLE2161AIDR
ActiveTexas Instruments
SINGLE, 36-V, 6.4-MHZ OPERATIONAL AMPLIFIER
Deep-Dive with AI
Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | TLE2161AIDR | TLE2161 Series |
|---|---|---|
| Amplifier Type | J-FET | J-FET |
| Current - Input Bias | 4 pA | 4 pA |
| Current - Output / Channel | 80 mA | 80 mA |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Circuits | 1 | 1 |
| Operating Temperature [Max] | 85 °C | 70 - 85 °C |
| Operating Temperature [Min] | -40 °C | -40 - 0 °C |
| Package / Case | 3.9 mm | 3.9 mm |
| Package / Case | 8-SOIC | 8-SOIC |
| Slew Rate | 10 V/çs | 10 V/çs |
| Supplier Device Package | 8-SOIC | 8-SOIC |
| Voltage - Input Offset | 500 çV | 500 - 600 çV |
| Voltage - Supply Span (Max) [Max] | 36 V | 36 V |
| Voltage - Supply Span (Min) [Min] | 7 V | 7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
TLE2161 Series
Single, 36-V, 6.4-MHz operational amplifier
| Part | Package / Case | Package / Case | Voltage - Supply Span (Max) [Max] | Mounting Type | Current - Output / Channel | Slew Rate | Number of Circuits | Voltage - Supply Span (Min) [Min] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Current - Input Bias | Amplifier Type | Voltage - Input Offset |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments TLE2161AIDRThe TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. | 3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 500 çV |
3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 500 çV | |
Texas Instruments TLE2161IDRThe TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. | 3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 600 µV |
3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | 0 °C | 70 ░C | 4 pA | J-FET | 600 µV | |
3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 600 µV | |
3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 600 µV | |
Texas Instruments TLE2161ACDThe TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. | 3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | 0 °C | 70 ░C | 4 pA | J-FET | 500 çV |
Texas Instruments TLE2161IDThe TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. | 3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 600 µV |
3.9 mm | 8-SOIC | 36 V | Surface Mount | 80 mA | 10 V/çs | 1 | 7 V | 8-SOIC | -40 °C | 85 °C | 4 pA | J-FET | 500 çV |
Description
General part information
TLE2161 Series
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product.
In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use.
The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).
Documents
Technical documentation and resources