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TLE2161 Series

Single, 36-V, 6.4-MHz operational amplifier

Manufacturer: Texas Instruments
Link to Manufacturer Page: https://www.ti.com/

Catalog

Single, 36-V, 6.4-MHz operational amplifier

PartPackage / CasePackage / CaseVoltage - Supply Span (Max) [Max]Mounting TypeCurrent - Output / ChannelSlew RateNumber of CircuitsVoltage - Supply Span (Min) [Min]Supplier Device PackageOperating Temperature [Min]Operating Temperature [Max]Current - Input BiasAmplifier TypeVoltage - Input Offset
Texas Instruments
TLE2161AIDR
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
500 çV
Texas Instruments
TLE2161AIDG4
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
500 çV
Texas Instruments
TLE2161IDR
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
600 µV
Texas Instruments
TLE2161CD
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
0 °C
70 ░C
4 pA
J-FET
600 µV
Texas Instruments
TLE2161IDRG4
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
600 µV
Texas Instruments
TLE2161IDG4
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
600 µV
Texas Instruments
TLE2161ACD
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
0 °C
70 ░C
4 pA
J-FET
500 çV
Texas Instruments
TLE2161ID
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
600 µV
Texas Instruments
TLE2161AID
3.9 mm
8-SOIC
36 V
Surface Mount
80 mA
10 V/çs
1
7 V
8-SOIC
-40 °C
85 °C
4 pA
J-FET
500 çV

Key Features

Excellent Output Drive CapabilityVO=± 2.5 V Min at RL= 100,VCC±= ± 5 VVO= ± 12.5 V Min at RL= 600,VCC±= ± 15 VLow Supply Current...280 uA TypDecompensated for High Slew Rate andGain-Bandwidth ProductAVD= 0.5 MinSlew Rate = 10 V/us TypGain-Bandwidth Product = 6.5 MHz TypWide Operating Supply Voltage RangeVCC±= ± 3.5 V to ± 18 VHigh Open-Loop Gain...280 V/mV TypLow Offset Voltage...500 uV MaxLow Offset Voltage Drift With Time0.04 uV/Month TypLow Input Bias Current...5 pA TypTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEuPOWER OPERATIONAL AMPLIFIERSSLOS049D - NOVEMBER 1989 - REVISED MAY 1996Excellent Output Drive CapabilityVO=± 2.5 V Min at RL= 100,VCC±= ± 5 VVO= ± 12.5 V Min at RL= 600,VCC±= ± 15 VLow Supply Current...280 uA TypDecompensated for High Slew Rate andGain-Bandwidth ProductAVD= 0.5 MinSlew Rate = 10 V/us TypGain-Bandwidth Product = 6.5 MHz TypWide Operating Supply Voltage RangeVCC±= ± 3.5 V to ± 18 VHigh Open-Loop Gain...280 V/mV TypLow Offset Voltage...500 uV MaxLow Offset Voltage Drift With Time0.04 uV/Month TypLow Input Bias Current...5 pA TypTLE2161, TLE2161A, TLE2161BEXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVEuPOWER OPERATIONAL AMPLIFIERSSLOS049D - NOVEMBER 1989 - REVISED MAY 1996

Description

AI
The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR). A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The TLE2161, TLE2161A, and TLE2161B are JFET-input, low-power, precision operational amplifiers manufactured using the Texas Instruments Excalibur process. Decompensated for stability with a minimum closed-loop gain of 5, these devices combine outstanding output drive capability with low power consumption, excellent dc precision, and high gain-bandwidth product. In addition to maintaining the traditional JFET advantages of fast slew rates and low input bias and offset currents, the Excalibur process offers outstanding parametric stability over time and temperature. This results in a device that remains precise even with changes in temperature and over years of use. The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR). A variety of available options includes small-outline packages and chip-carrier versions for high-density system applications. The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C.