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Description

General part information

STD40 Series

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTD40N2LH5
Current - Continuous Drain (Id) (Tc)40 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On)5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)6.3 nC
Input Capacitance (Ciss) (Max)700 pF
Mounting TypeSurface Mount
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power Dissipation (Max)35 W
Rds On (Max)11.8 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)22 V
Vgs(th) (Max)1 V

Pricing

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CAD

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