STD40P8F6AG Series

Automotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package

Catalog

Automotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package

Part	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Supplier Device Package	Qualification	Vgs (Max)	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STD40P8F6AG	73 nC	28 mOhm	100 W	4112 pF	10 V	P-Channel	80 V	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	TO-252 (DPAK)	AEC-Q101	20 V	4 V	Automotive
STMicroelectronics STD40P3LLH6		15 mOhm		2615 pF	4.5 V 10 V	P-Channel	30 V	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	DPAK		20 V	2.5 V		24 nC	60 W
STMicroelectronics STD40NF10		28 mOhm		2180 pF	10 V	N-Channel	100 V	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	DPAK		20 V	4 V			125 W	62 nC	50 A

Catalog

Automotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package

Description

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.