STD40P3LLH6

Obsolete

STMicroelectronics

MOSFET P-CH 30V 40A DPAK

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STD40P3LLH6

Obsolete

STMicroelectronics

MOSFET P-CH 30V 40A DPAK

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD40P3LLH6

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	2615 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

STD40P8F6AG Series

Automotive-grade P-channel -80 V, 18.5 mOhm typ., -40 A STripFET F6 Power MOSFET in a DPAK package

Part	Gate Charge (Qg) (Max) @ Vgs [x]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Technology	Supplier Device Package	Qualification	Vgs (Max)	Vgs(th) (Max) @ Id	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STD40P8F6AG	73 nC	28 mOhm	100 W	4112 pF	10 V	P-Channel	80 V	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	TO-252 (DPAK)	AEC-Q101	20 V	4 V	Automotive
STMicroelectronics STD40P3LLH6		15 mOhm		2615 pF	4.5 V 10 V	P-Channel	30 V	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	DPAK		20 V	2.5 V		24 nC	60 W
STMicroelectronics STD40NF10		28 mOhm		2180 pF	10 V	N-Channel	100 V	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	MOSFET (Metal Oxide)	DPAK		20 V	4 V			125 W	62 nC	50 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STD40P8F6AG Series

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.

Documents

Technical documentation and resources

No documents available