STPSC12065D
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220AC, 2 PINS
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STPSC12065D
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 650 V, 12 A, 36 NC, TO-220AC, 2 PINS
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STPSC12065D | STPSC12065 Series |
|---|---|---|
| Capacitance @ Vr, F | 750 pF | 750 pF |
| Current - Average Rectified (Io) | 12 A | 12 A |
| Current - Reverse Leakage @ Vr | 150 µA | 50 - 150 µA |
| Grade | - | Automotive |
| Mounting Type | Through Hole | Through Hole, Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C | -40 °C |
| Package / Case | TO-220-2 | TO-220-2, D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Qualification | - | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns | 0 ns |
| Speed | No Recovery Time | No Recovery Time |
| Supplier Device Package | TO-220AC | TO-220AC, D2PAK |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 650 V | 650 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 1.45 V | 1.45 V |
STPSC12065 Series
650 V power Schottky silicon carbide diode
| Part | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Average Rectified (Io) | Technology | Voltage - Forward (Vf) (Max) @ If [Max] | Current - Reverse Leakage @ Vr | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Package / Case | Speed | Supplier Device Package | Mounting Type | Voltage - DC Reverse (Vr) (Max) [Max] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STPSC12065D | 750 pF | 0 ns | 12 A | SiC (Silicon Carbide) Schottky | 1.45 V | 150 µA | -40 °C | 175 ░C | TO-220-2 | No Recovery Time | TO-220AC | Through Hole | 650 V | ||
STMicroelectronics STPSC12065DY | 750 pF | 0 ns | 12 A | SiC (Silicon Carbide) Schottky | 1.45 V | 50 µA | -40 °C | 175 ░C | TO-220-2 | No Recovery Time | TO-220AC | Through Hole | 650 V | AEC-Q101 | Automotive |
STMicroelectronics STPSC12065G2-TR | 750 pF | 0 ns | 12 A | SiC (Silicon Carbide) Schottky | 1.45 V | 150 µA | -40 °C | 175 ░C | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | No Recovery Time | D2PAK | Surface Mount | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STPSC12065 Series
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Housed in D²PAK HV, this diode is perfectly suited for a usage in PFC applications, in charging station, DC/DC, easing the compliance to IEC-60664-1.
Documents
Technical documentation and resources