Zenode.ai Logo
Log InSign Up
EPC2104ENGRT - eGaN Series

EPC2104ENGRT

Unknown
EPC

GANFET 2N-CH 100V 23A DIE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
EPC2104ENGRT - eGaN Series

EPC2104ENGRT

Unknown
EPC

GANFET 2N-CH 100V 23A DIE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics commom to parts in this series

SpecificationEPC2104ENGRTEPC210 Series
Configuration2 N-Channel (Half Bridge)2 N-Channel (Half Bridge), 3 N-Channel (Half Bridge + Synchronous Bootstrap)
Current - Continuous Drain (Id) @ 25°C23 A1.7 - 500 A
Current - Continuous Drain (Id) @ 25°C-38 A
Current - Continuous Drain (Id) @ 25°C-9.5 A
Drain to Source Voltage (Vdss)100 V30 - 100 V
Gate Charge (Qg) (Max) @ Vgs7 nC0.16 - 7 nC
Gate Charge (Qg) (Max) @ Vgs-2.5 - 6.8 nC
Gate Charge (Qg) (Max) @ Vgs-0.044 - 19 nC
Input Capacitance (Ciss) (Max) @ Vds800 pF7 - 7600 pF
Mounting TypeSurface MountSurface Mount
Operating Temperature [Max]150 °C150 °C
Operating Temperature [Min]-40 °C-40 °C
Package / CaseDieDie, 9-VFBGA
Rds On (Max) @ Id, Vgs6.3 mOhm2.1 - 320 mOhm
Supplier Device PackageDieDie, 9-BGA (1.35x1.35)
TechnologyGaNFET (Gallium Nitride)GaNFET (Gallium Nitride)
Vgs(th) (Max) @ Id2.5 V2.5 V

EPC210 Series

GANFET 2N-CH 60V 23A DIE

PartTechnologyCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ Vgs [Max]Rds On (Max) @ Id, VgsSupplier Device PackagePackage / CaseConfigurationOperating Temperature [Max]Operating Temperature [Min]Vgs(th) (Max) @ IdMounting TypeInput Capacitance (Ciss) (Max) @ VdsDrain to Source Voltage (Vdss)Gate Charge (Qg) (Max) @ VgsGate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°C [Max]Current - Continuous Drain (Id) @ 25°C [Min]
EPC
EPC2102ENGRT
GaNFET (Gallium Nitride)
23 A
6.8 nC
4.4 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
830 pF
60 V
EPC
EPC2104ENGRT
GaNFET (Gallium Nitride)
23 A
6.3 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
800 pF
100 V
7 nC
EPC
EPC2105ENGRT
GaNFET (Gallium Nitride)
9.5 A
2.5 nC
14.5 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
300 pF
80 V
EPC
EPC2106ENGRT
GaNFET (Gallium Nitride)
1.7 A
70 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
75 pF
100 V
0.73 nC
EPC
EPC2103
GaNFET (Gallium Nitride)
28 A
5.5 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
760 pF
80 V
6.5 nC
EPC
EPC2104
GaNFET (Gallium Nitride)
23 A
6.3 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
800 pF
100 V
7 nC
EPC
EPC2100ENGRT
GaNFET (Gallium Nitride)
10 A, 40 A
2.1 mOhm, 8.2 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V, 2.5 V
Surface Mount
475 pF, 1960 pF
30 V
4.9 nC
19 nC
EPC
EPC2105
GaNFET (Gallium Nitride)
3.4 mOhm, 14.5 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V, 2.5 V
Surface Mount
300 pF, 1100 pF
80 V
2.5 nC
10 nC
38 A
9.5 A
EPC
EPC2106
GaNFET (Gallium Nitride)
1.7 A
70 mOhm
Die
Die
2 N-Channel (Half Bridge)
150 °C
-40 °C
2.5 V
Surface Mount
75 pF
100 V
0.73 nC
EPC
EPC2107
GaNFET (Gallium Nitride)
1.7 A, 500 mA
3.3 Ohm, 320 mOhm
9-BGA (1.35x1.35)
9-VFBGA
3 N-Channel (Half Bridge + Synchronous Bootstrap)
150 °C
-40 °C
2.5 V, 2.5 V
Surface Mount
7 pF, 16 pF
100 V
0.16 nC
0.044 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

EPC210 Series

Mosfet Array 100V 23A Surface Mount Die

Documents

Technical documentation and resources

Datasheet

Datasheet