Specification	SSM6L820R,LXHF

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss) (Option 1)	30 V
Drain to Source Voltage (Vdss) (Option 2)	20 V
Gate Charge (Max)	3.2 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	480 pF, 310 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	Flat Leads, 6-SMD
Package Name	6-TSOP-F
Power - Max (Ta)	1.4 W
Qualification	AEC-Q101
Rds On (Max)	45 mOhm, 39.1 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	1.2 V, 1 V

SSM6L820R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch + P-ch MOSFET, 30 V/-20 V, 4 A/-4 A, 0.0391 Ω@4.5V/0.045 Ω@10V, TSOP6F

Part	Package / Case	Drain to Source Voltage (Vdss) (Option 1)	Drain to Source Voltage (Vdss) (Option 2)	Technology	Configuration	Power - Max (Ta)	Package Name	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Rds On (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Operating Temperature	Qualification	Grade
Toshiba Semiconductor and Storage SSM6L820R,LF	6-SMD Flat Leads	30 V	20 V	MOSFET (Metal Oxide)	N P-Channel	1.4 W	6-TSOP-F	310 pF 480 pF	3.2 nC	39.1 mOhm 45 mOhm	1 V 1.2 V	4 A	Surface Mount	150 °C
Toshiba Semiconductor and Storage SSM6L820R,LXHF	6-SMD Flat Leads	30 V	20 V	MOSFET (Metal Oxide)	N P-Channel	1.4 W	6-TSOP-F	310 pF 480 pF	3.2 nC	39.1 mOhm 45 mOhm	1 V 1.2 V	4 A	Surface Mount	150 °C	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources