SSM6L820R,LF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6L820R,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	20 V, 30 V
Gate Charge (Qg) (Max) @ Vgs	6.7 nC
Gate Charge (Qg) (Max) @ Vgs	3.2 nC
Input Capacitance (Ciss) (Max) @ Vds	310 pF, 480 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	45 mOhm, 39.1 mOhm
Supplier Device Package	6-TSOP-F
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V, 1.2 V

Part	Operating Temperature	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power - Max [Max]	Configuration	Rds On (Max) @ Id, Vgs	Mounting Type	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs
Toshiba Semiconductor and Storage SSM6L820R,LF	150 °C	1 V 1.2 V	310 pF 480 pF	MOSFET (Metal Oxide)	4 A	20 V 30 V	6-TSOP-F	1.4 W	N and P-Channel	39.1 mOhm 45 mOhm	Surface Mount	6-SMD Flat Leads	6.7 nC	3.2 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 30V, 20V 4A (Ta) 1.4W (Ta) Surface Mount 6-TSOP-F

Technical documentation and resources

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