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MOSFET N/P-CH 30V/20V 4A 6TSOPF
| Part | Operating Temperature | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Power - Max [Max] | Configuration | Rds On (Max) @ Id, Vgs | Mounting Type | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 150 °C | 1 V 1.2 V | 310 pF 480 pF | MOSFET (Metal Oxide) | 4 A | 20 V 30 V | 6-TSOP-F | 1.4 W | N and P-Channel | 39.1 mOhm 45 mOhm | Surface Mount | 6-SMD Flat Leads | 6.7 nC | 3.2 nC |