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Toshiba Semiconductor and Storage

Series List(1548)

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SeriesCategory# PartsStatusDescription

Standalone parts(1149)

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PartInput TypePropagation Delay tpLH / tpHL (Max) [Max] [custom]Propagation Delay tpLH / tpHL (Max) [Max] [custom]Rise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Voltage - Supply [Max]Voltage - Supply [Min]Number of ChannelsData RateMounting TypeCurrent - Output / ChannelOperating Temperature [Max]Operating Temperature [Min]Voltage - Forward (Vf) (Typ)Common Mode Transient Immunity (Min) [Min]Inputs - Side 1/Side 2 [custom]Inputs - Side 1/Side 2 [custom]Output TypeVoltage - IsolationCurrent - DC Forward (If) (Max) [Max]Supplier Device PackageDrive Voltage (Max Rds On, Min Rds On)Current - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)TechnologyVgs(th) (Max) @ IdFET TypePower Dissipation (Max)Input Capacitance (Ciss) (Max) @ VdsVgs (Max)Rds On (Max) @ Id, VgsQualificationOperating TemperatureGate Charge (Qg) (Max) @ Vgs [Max]GradeInput Capacitance (Ciss) (Max) @ Vds [Max]Power Dissipation (Max) [Max]Resistor - Base (R1)Current - Collector (Ic) (Max) [Max]Package / CaseFrequency - TransitionTransistor TypeVoltage - Collector Emitter Breakdown (Max) [Max]DC Current Gain (hFE) (Min) @ Ic, Vce [Min]Resistor - Emitter Base (R2)Current - Collector Cutoff (Max) [Max]Power - Max [Max]Vce Saturation (Max) @ Ib, IcRds On (Max) @ Id, Vgs [Max]Vgs (Max) [Max]Vgs (Max) [Min]TypeVoltage Supply SourceCurrent - Output High, Low [custom]Current - Output High, Low [custom]Package / Case [y]Package / Case [y]Independent CircuitsCircuit [custom]Circuit [custom]ApplicationsPower - Peak PulseVoltage - Clamping (Max) @ Ipp [Max]Power Line ProtectionVoltage - Breakdown (Min) [Min]Current - Peak Pulse (10/1000µs)Capacitance @ FrequencyVoltage - Reverse Standoff (Typ)Unidirectional Channels [custom]Number of DriversDriven ConfigurationLogic Voltage - VIL, VIH [custom]Logic Voltage - VIL, VIH [custom]Channel TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]PSRROutput ConfigurationVoltage - Input (Max) [Max]Current - OutputVoltage Dropout (Max) [Max]Protection FeaturesControl FeaturesNumber of RegulatorsCurrent - Quiescent (Iq)Output Type
Toshiba Semiconductor and Storage
TLP108(DPW-TPL,F)
DC
250 ns
250 ns
30 ns
30 ns
20 V
4.5 V
1
5 MBd
Surface Mount
25 mA
100 °C
-40 °C
1.57 V
10 kV/µs
0
1
Push-Pull
Totem Pole
3750 Vrms
20 mA
5 Lead
6-MFSOP
Toshiba Semiconductor and Storage
SSM3K361TU,LXHF
Surface Mount
UFM
4.5 V
10 V
3.5 A
100 V
MOSFET (Metal Oxide)
2.5 V
N-Channel
1 W
430 pF
20 V
69 mOhm
AEC-Q101
175 °C
3.2 nC
Automotive
Toshiba Semiconductor and Storage
SSM3K62TU,LXHF
Surface Mount
UFM
1.2 V
4.5 V
800 mA
20 V
MOSFET (Metal Oxide)
1 V
N-Channel
8 V
57 mOhm
AEC-Q101
150 °C
2 nC
Automotive
177 pF
500 mW
Toshiba Semiconductor and Storage
RN4909(T5L,F,T)
Surface Mount
US6
47 kOhms
100 mA
6-TSSOP
SC-88
SOT-363
200 MHz
1 NPN
1 PNP
50 V
70
22 kOhms
100 nA
200 mW
300 mV
Toshiba Semiconductor and Storage
SSM3J145TU,LXHF
Surface Mount
UFM
1.5 V
4.5 V
3 A
20 V
MOSFET (Metal Oxide)
1 V
P-Channel
270 pF
AEC-Q101
150 °C
4.6 nC
Automotive
500 mW
103 mOhm
6 V
-8 V
Toshiba Semiconductor and Storage
TC7WH157FU,LJ(CT
5.5 V
2 V
Surface Mount
85 °C
-40 °C
8-SSOP
8-MSOP
8-TSSOP
Multiplexer
Single Supply
8 mA
8 mA
0.11 in
2.8 mm
1
2:1
1
Toshiba Semiconductor and Storage
MSZ30V,LF
Surface Mount
S-Mini
150 °C
SC-59
SOT-23-3
TO-236-3
Zener
General Purpose
200 W
47.5 V
28 V
4 A
21 pF
30 V
1
Toshiba Semiconductor and Storage
TCK402G,LF
Non-Inverting
28 V
2.7 V
Surface Mount
85 °C
-40 °C
6-WCSPE (0.80x1.2)
6-UFBGA
WLCSP
1
Low-Side
1.6 V
0.4 V
Single
1.5 µs
0.2 ms
Toshiba Semiconductor and Storage
TCR5SB30A(T5L,F,T)
Surface Mount
85 °C
-40 °C
SMV
SC-74A
SOT-753
80 dB
Positive
6 V
150 mA
0.19 V
Over Current
Enable
1
75 µA
1.81 mOhm
Toshiba Semiconductor and Storage
TA76431AS,T6MURF(J
Through Hole
85 °C
-40 °C
LSTM
TO-226-3
TO-92-3 Long Body