RN4909(T5L,F,T)
ObsoleteToshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
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RN4909(T5L,F,T)
ObsoleteToshiba Semiconductor and Storage
TRANS NPN/PNP PREBIAS 0.2W US6
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RN4909(T5L,F,T) |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 mA |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 70 |
| Frequency - Transition | 200 MHz |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Power - Max [Max] | 200 mW |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Supplier Device Package | US6 |
| Transistor Type | 1 NPN, 1 PNP |
| Vce Saturation (Max) @ Ib, Ic | 300 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 50 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
RN4909(T5L,F,T)
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 200mW Surface Mount US6
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Technical documentation and resources
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