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Toshiba Semiconductor and Storage
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
Toshiba Semiconductor and Storage2SK3132 | Transistors | 1 | 8 | |
Toshiba Semiconductor and Storage2SK3309 | Discrete Semiconductor Products | 2 | 8 | |
Toshiba Semiconductor and Storage2SK3466 | Transistors | 1 | 8 | |
Toshiba Semiconductor and Storage2SK3566 | Transistors | 1 | 6 | |
Toshiba Semiconductor and Storage2SK3670 | Single FETs, MOSFETs | 3 | 8 | |
Toshiba Semiconductor and Storage2SK3700 | Transistors | 1 | 6 | |
Toshiba Semiconductor and Storage2SK4017 | Discrete Semiconductor Products | 1 | 8 | |
Toshiba Semiconductor and Storage2SK4021 | Discrete Semiconductor Products | 1 | 8 | |
Toshiba Semiconductor and Storage2SK880 | Transistors | 2 | 1 | |
Toshiba Semiconductor and Storage30JL2C | Rectifiers | 1 | 8 | |
Standalone parts(1149)
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| Part | Input Type | Propagation Delay tpLH / tpHL (Max) [Max] [custom] | Propagation Delay tpLH / tpHL (Max) [Max] [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Number of Channels | Data Rate | Mounting Type | Current - Output / Channel | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Forward (Vf) (Typ) | Common Mode Transient Immunity (Min) [Min] | Inputs - Side 1/Side 2 [custom] | Inputs - Side 1/Side 2 [custom] | Output Type | Voltage - Isolation | Current - DC Forward (If) (Max) [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Rds On (Max) @ Id, Vgs | Qualification | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Resistor - Base (R1) | Current - Collector (Ic) (Max) [Max] | Package / Case | Frequency - Transition | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] | Type | Voltage Supply Source | Current - Output High, Low [custom] | Current - Output High, Low [custom] | Package / Case [y] | Package / Case [y] | Independent Circuits | Circuit [custom] | Circuit [custom] | Applications | Power - Peak Pulse | Voltage - Clamping (Max) @ Ipp [Max] | Power Line Protection | Voltage - Breakdown (Min) [Min] | Current - Peak Pulse (10/1000µs) | Capacitance @ Frequency | Voltage - Reverse Standoff (Typ) | Unidirectional Channels [custom] | Number of Drivers | Driven Configuration | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | PSRR | Output Configuration | Voltage - Input (Max) [Max] | Current - Output | Voltage Dropout (Max) [Max] | Protection Features | Control Features | Number of Regulators | Current - Quiescent (Iq) | Output Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | DC | 250 ns | 250 ns | 30 ns | 30 ns | 20 V | 4.5 V | 1 | 5 MBd | Surface Mount | 25 mA | 100 °C | -40 °C | 1.57 V | 10 kV/µs | 0 | 1 | Push-Pull Totem Pole | 3750 Vrms | 20 mA | 5 Lead 6-MFSOP | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Surface Mount | UFM | 4.5 V 10 V | 3.5 A | 100 V | MOSFET (Metal Oxide) | 2.5 V | N-Channel | 1 W | 430 pF | 20 V | 69 mOhm | AEC-Q101 | 175 °C | 3.2 nC | Automotive | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Surface Mount | UFM | 1.2 V 4.5 V | 800 mA | 20 V | MOSFET (Metal Oxide) | 1 V | N-Channel | 8 V | 57 mOhm | AEC-Q101 | 150 °C | 2 nC | Automotive | 177 pF | 500 mW | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Surface Mount | US6 | 47 kOhms | 100 mA | 6-TSSOP SC-88 SOT-363 | 200 MHz | 1 NPN 1 PNP | 50 V | 70 | 22 kOhms | 100 nA | 200 mW | 300 mV | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Surface Mount | UFM | 1.5 V 4.5 V | 3 A | 20 V | MOSFET (Metal Oxide) | 1 V | P-Channel | 270 pF | AEC-Q101 | 150 °C | 4.6 nC | Automotive | 500 mW | 103 mOhm | 6 V | -8 V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | 5.5 V | 2 V | Surface Mount | 85 °C | -40 °C | 8-SSOP | 8-MSOP 8-TSSOP | Multiplexer | Single Supply | 8 mA | 8 mA | 0.11 in | 2.8 mm | 1 | 2:1 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Surface Mount | S-Mini | 150 °C | SC-59 SOT-23-3 TO-236-3 | Zener | General Purpose | 200 W | 47.5 V | 28 V | 4 A | 21 pF | 30 V | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Non-Inverting | 28 V | 2.7 V | Surface Mount | 85 °C | -40 °C | 6-WCSPE (0.80x1.2) | 6-UFBGA WLCSP | 1 | Low-Side | 1.6 V | 0.4 V | Single | 1.5 µs | 0.2 ms | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Surface Mount | 85 °C | -40 °C | SMV | SC-74A SOT-753 | 80 dB | Positive | 6 V | 150 mA | 0.19 V | Over Current | Enable | 1 | 75 µA | 1.81 mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage | Through Hole | 85 °C | -40 °C | LSTM | TO-226-3 TO-92-3 Long Body |