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Toshiba Semiconductor and Storage
| Series | Category | # Parts | Status | Description | 
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description | 
|---|---|---|---|---|---|
| Series | Category | # Parts | Status | Description | 
|---|---|---|---|---|
| Part | Spec A | Spec B | Spec C | Spec D | Description | 
|---|---|---|---|---|---|
| Part | Input Type | Propagation Delay tpLH / tpHL (Max) [Max] [custom] | Propagation Delay tpLH / tpHL (Max) [Max] [custom] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Voltage - Supply [Max] | Voltage - Supply [Min] | Number of Channels | Data Rate | Mounting Type | Current - Output / Channel | Operating Temperature [Max] | Operating Temperature [Min] | Voltage - Forward (Vf) (Typ) | Common Mode Transient Immunity (Min) [Min] | Inputs - Side 1/Side 2 [custom] | Inputs - Side 1/Side 2 [custom] | Output Type | Voltage - Isolation | Current - DC Forward (If) (Max) [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | FET Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Rds On (Max) @ Id, Vgs | Qualification | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Resistor - Base (R1) | Current - Collector (Ic) (Max) [Max] | Package / Case | Frequency - Transition | Transistor Type | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Resistor - Emitter Base (R2) | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] | Type | Voltage Supply Source | Current - Output High, Low [custom] | Current - Output High, Low [custom] | Package / Case [y] | Package / Case [y] | Independent Circuits | Circuit [custom] | Circuit [custom] | Applications | Power - Peak Pulse | Voltage - Clamping (Max) @ Ipp [Max] | Power Line Protection | Voltage - Breakdown (Min) [Min] | Current - Peak Pulse (10/1000µs) | Capacitance @ Frequency | Voltage - Reverse Standoff (Typ) | Unidirectional Channels [custom] | Number of Drivers | Driven Configuration | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Channel Type | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | PSRR | Output Configuration | Voltage - Input (Max) [Max] | Current - Output | Voltage Dropout (Max) [Max] | Protection Features | Control Features | Number of Regulators | Current - Quiescent (Iq) | Output Type | 
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Toshiba Semiconductor and Storage  | DC  | 250 ns  | 250 ns  | 30 ns  | 30 ns  | 20 V  | 4.5 V  | 1  | 5 MBd  | Surface Mount  | 25 mA  | 100 °C  | -40 °C  | 1.57 V  | 10 kV/µs  | 0  | 1  | Push-Pull  Totem Pole  | 3750 Vrms  | 20 mA  | 5 Lead  6-MFSOP  | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Surface Mount  | UFM  | 4.5 V  10 V  | 3.5 A  | 100 V  | MOSFET (Metal Oxide)  | 2.5 V  | N-Channel  | 1 W  | 430 pF  | 20 V  | 69 mOhm  | AEC-Q101  | 175 °C  | 3.2 nC  | Automotive  | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Surface Mount  | UFM  | 1.2 V  4.5 V  | 800 mA  | 20 V  | MOSFET (Metal Oxide)  | 1 V  | N-Channel  | 8 V  | 57 mOhm  | AEC-Q101  | 150 °C  | 2 nC  | Automotive  | 177 pF  | 500 mW  | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Surface Mount  | US6  | 47 kOhms  | 100 mA  | 6-TSSOP  SC-88  SOT-363  | 200 MHz  | 1 NPN  1 PNP  | 50 V  | 70  | 22 kOhms  | 100 nA  | 200 mW  | 300 mV  | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Surface Mount  | UFM  | 1.5 V  4.5 V  | 3 A  | 20 V  | MOSFET (Metal Oxide)  | 1 V  | P-Channel  | 270 pF  | AEC-Q101  | 150 °C  | 4.6 nC  | Automotive  | 500 mW  | 103 mOhm  | 6 V  | -8 V  | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | 5.5 V  | 2 V  | Surface Mount  | 85 °C  | -40 °C  | 8-SSOP  | 8-MSOP  8-TSSOP  | Multiplexer  | Single Supply  | 8 mA  | 8 mA  | 0.11 in  | 2.8 mm  | 1  | 2:1  | 1  | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Surface Mount  | S-Mini  | 150 °C  | SC-59  SOT-23-3  TO-236-3  | Zener  | General Purpose  | 200 W  | 47.5 V  | 28 V  | 4 A  | 21 pF  | 30 V  | 1  | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Non-Inverting  | 28 V  | 2.7 V  | Surface Mount  | 85 °C  | -40 °C  | 6-WCSPE (0.80x1.2)  | 6-UFBGA  WLCSP  | 1  | Low-Side  | 1.6 V  | 0.4 V  | Single  | 1.5 µs  | 0.2 ms  | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Surface Mount  | 85 °C  | -40 °C  | SMV  | SC-74A  SOT-753  | 80 dB  | Positive  | 6 V  | 150 mA  | 0.19 V  | Over Current  | Enable  | 1  | 75 µA  | 1.81 mOhm  | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Toshiba Semiconductor and Storage  | Through Hole  | 85 °C  | -40 °C  | LSTM  | TO-226-3  TO-92-3 Long Body  | 
| Series | Category | # Parts | Status | Description | 
|---|---|---|---|---|
Toshiba Semiconductor and Storage2SC4738  | Single Bipolar Transistors | 2 | 1 | |
Toshiba Semiconductor and Storage2SC4793  | Bipolar (BJT) | 5 | 8 | |
Toshiba Semiconductor and Storage2SC4881  | Bipolar (BJT) | 1 | 8 | |
Toshiba Semiconductor and Storage2SC4935  | Transistors | 1 | 8 | |
Toshiba Semiconductor and Storage2SC4944  | Single Bipolar Transistors | 2 | 1 | |
Toshiba Semiconductor and Storage2SC5065  | Discrete Semiconductor Products | 1 | 8 | |
Toshiba Semiconductor and Storage2SC5066  | Transistors | 1 | 8 | |
Toshiba Semiconductor and Storage2SC5084  | Transistors | 1 | 8 | |
Toshiba Semiconductor and Storage2SC5086  | Discrete Semiconductor Products | 1 | 8 | |
Toshiba Semiconductor and Storage2SC5087  | Bipolar RF Transistors | 1 | 8 | |