S
STMicroelectronics
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTX13003 | Transistors | 1 | 8 | |
STMicroelectronicsSTX13004 | Transistors | 1 | 8 | |
STMicroelectronicsSTX13005 | Bipolar (BJT) | 3 | 8 | |
| Power bipolar | 1 | 4 | The device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage withstand capability. The device is designed for use in SMPS and battery charger. | |
STMicroelectronicsSTX715 | Transistors | 1 | 8 | |
STMicroelectronicsSTX817 | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTX83003 | Single Bipolar Transistors | 1 | 8 | |
STMicroelectronicsSTY100N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package | Discrete Semiconductor Products | 5 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTY100NM60NN-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package | Discrete Semiconductor Products | 4 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |
STMicroelectronicsSTY105NM50NN-channel 500 V, 0.018 Ohm typ., 110 A MDmesh II Power MOSFET in Max247 package | Semiconductors - Discretes | 3 | 1 | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. |