STY100NM60N Series

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Catalog

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Part	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STY100NM60N
STMicroelectronics STY100NM60N
STMicroelectronics STY100NM60N
STMicroelectronics STY100NM60N	MOSFET (Metal Oxide)	4 V	600 V	29 mOhm	330 nC	10 V	625 W	MAX247™	N-Channel	TO-247-3	98 A	-55 °C	150 °C	25 V	Through Hole	9600 pF

Catalog

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.