STY100NM60N
ActiveN-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE
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STY100NM60N
ActiveN-CHANNEL 600 V, 0.025 OHM TYP., 98 A, MDMESH(TM) II POWER MOSFET IN MAX247 PACKAGE
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Technical Specifications
Parameters and characteristics commom to parts in this series
| Specification | STY100NM60N | STY100 Series |
|---|---|---|
| Current - Continuous Drain (Id) @ 25°C | - | 98 - 100 A |
| Drain to Source Voltage (Vdss) | - | 200 - 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10 V |
| FET Type | - | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | - | 330 - 360 nC |
| Input Capacitance (Ciss) (Max) @ Vds | - | 7900 pF |
| Input Capacitance (Ciss) (Max) @ Vds | - | 9600 pF |
| Mounting Type | - | Through Hole |
| null | - | |
| Operating Temperature | - | 150 °C |
| Operating Temperature | - | -55 °C |
| Operating Temperature | - | 150 °C |
| Package / Case | - | TO-247-3 |
| Power Dissipation (Max) | - | 450 - 625 W |
| Rds On (Max) @ Id, Vgs | - | 24 - 29 mOhm |
| Supplier Device Package | - | MAX247™ |
| Technology | - | MOSFET (Metal Oxide) |
| Vgs (Max) | - | 20 V |
| Vgs (Max) | - | 25 V |
| Vgs(th) (Max) @ Id | - | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
STY100 Series
N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type | FET Type | Vgs (Max) | Power Dissipation (Max) | Package / Case | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics STY100NM60N | |||||||||||||||||||
STMicroelectronics STY100NS20FD | 4 V | 100 A | 7900 pF | Through Hole | N-Channel | 20 V | 450 W | TO-247-3 | 200 V | 10 V | 24 mOhm | MAX247™ | MOSFET (Metal Oxide) | 360 nC | 150 °C | ||||
STMicroelectronics STY100NM60N | |||||||||||||||||||
STMicroelectronics STY100NM60N | |||||||||||||||||||
STMicroelectronics STY100NM60N | 4 V | 98 A | Through Hole | N-Channel | 625 W | TO-247-3 | 600 V | 10 V | 29 mOhm | MAX247™ | MOSFET (Metal Oxide) | 330 nC | -55 °C | 150 °C | 25 V | 9600 pF |
Description
General part information
STY100 Series
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources