STY100 Series

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Catalog

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Part	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	FET Type	Vgs (Max)	Power Dissipation (Max)	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds
STMicroelectronics STY100NM60N
STMicroelectronics STY100NS20FD	4 V	100 A	7900 pF	Through Hole	N-Channel	20 V	450 W	TO-247-3	200 V	10 V	24 mOhm	MAX247™	MOSFET (Metal Oxide)	360 nC	150 °C
STMicroelectronics STY100NM60N
STMicroelectronics STY100NM60N
STMicroelectronics STY100NM60N	4 V	98 A		Through Hole	N-Channel		625 W	TO-247-3	600 V	10 V	29 mOhm	MAX247™	MOSFET (Metal Oxide)	330 nC		-55 °C	150 °C	25 V	9600 pF

Catalog

N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.