| Series | Category | # Parts | Status | Description |
|---|---|---|---|---|
STMicroelectronicsSTQ1NK60N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package | Power MOSFETs | 4 | 1 | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTQ1NK60ZRN-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package | Power MOSFETs | 4 | 1 | These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTQ1NK80ZR-APN-channel 800 V, 13 Ohm typ., 250 mA SuperMESH Power MOSFET in a TO-92 package | Semiconductors - Discretes | 2 | 1 | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTQ2 | Discrete Semiconductor Products | 1 | 8 | |
STMicroelectronicsSTQ2HNK60ZR-APN-channel 600 V, 3.5 Ohm typ., 500 mA SuperMESH Power MOSFET in a TO-92 package | Discretes | 3 | 1 | These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. |
STMicroelectronicsSTQ2LN60K3-APN-channel 600 V, 4 Ohm typ., 0.6 A, MDmesh K3 Power MOSFET in a TO-92 package | Power MOSFETs | 3 | 1 | This MDmesh™ K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. |
STMicroelectronicsSTQ3 | Discrete Semiconductor Products | 1 | 8 | |
| Semiconductors - Discretes | 2 | 1 | This device is a high voltage fast-switching NPN power transistor, manufactured using diffused collector planar technology for high switching speeds.
It employs a base island structure with planar edge termination to enhance switching speeds, while maintaining a wide RBSOA. | |
| Discrete Semiconductor Products | 3 | 1 | This device is a high voltage fast-switching PNP power transistor, manufactured using high voltage multi-epitaxial planar technology for high switching speeds.
It employs a cellular emitter structure with planar edge termination to enhance switching speeds, while maintaining a wide RBSOA. | |
STMicroelectronicsSTR2N2N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package | Semiconductors - Discretes | 3 | 1 | This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class. |