STQ1NK60ZR Series

N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

Catalog

N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

Part	Power Dissipation (Max) [Max]	Mounting Type	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)
STMicroelectronics STQ1NK60ZR-AP	3 W	Through Hole	TO-226-3, TO-92-3	4.5 V	300 mA	MOSFET (Metal Oxide)	30 V	TO-92-3	15 Ohm	-55 °C	150 °C	10 V	94 pF	N-Channel	6.9 nC	600 V

Catalog

N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package

Description

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.