STR2N2 Series

N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package

Catalog

N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package

Part	Supplier Device Package	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Technology	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STR2N2VH5	SOT-23-3	350 mW	4.6 nC	SC-59, SOT-23-3, TO-236-3	Surface Mount	367 pF	2.5 V, 4.5 V	30 mOhm	N-Channel	20 V	-55 °C	150 °C	700 mV	8 V	MOSFET (Metal Oxide)	2.3 A

Catalog

N-channel 20 V, 0.025 Ohm typ., 2.3 A STripFET H5 Power MOSFET in SOT-23 package

Description

This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.