Catalog(3 parts)
| Part | Drain to Source Voltage (Vdss)▲▼ | Gate Charge (Qg) (Max) @ Vgs▲▼ | Rds On (Max) @ Id, Vgs▲▼ | Vgs (Max)▲▼ | Supplier Device Package | Operating Temperature▲▼ | Operating Temperature▲▼ | Current - Continuous Drain (Id) @ 25°C▲▼ | FET Type | Mounting Type | Technology | Drive Voltage (Max Rds On, Min Rds On)▲▼ | Package / Case | Power Dissipation (Max)▲▼ | Vgs(th) (Max) @ Id▲▼ | Package / Case▲▼ |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
15 V | 5.450000006845812e-9 C | 0.18000000715255737 Ω | -15 V, 2 V | 8-TSSOP | 150 °C | -40 °C | 1.2699999809265137 A | P-Channel | Surface Mount | MOSFET (Metal Oxide) | 2.700000047683716 V, 10 V | 8-TSSOP (0.173", 4.40mm Width) | 0.5040000081062317 W | 1.5 V | ||
15 V | 5.450000006845812e-9 C | 0.18000000715255737 Ω | -15 V, 2 V | 8-SOIC | 150 °C | -40 °C | 1.600000023841858 A | P-Channel | Surface Mount | MOSFET (Metal Oxide) | 2.700000047683716 V, 10 V | 8-SOIC | 0.7910000085830688 W | 1.5 V | 0.003899999894201755 m | |
15 V | 5.450000006845812e-9 C | 0.18000000715255737 Ω | -15 V, 2 V | 8-TSSOP | 150 °C | -40 °C | 1.2699999809265137 A | P-Channel | Surface Mount | MOSFET (Metal Oxide) | 2.700000047683716 V, 10 V | 8-TSSOP (0.173", 4.40mm Width) | 0.5040000081062317 W | 1.5 V |
Key Features
• Low rDS(on). . . 0.18Typ at VGS= -10 V3 V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th)= -1.5 V MaxAvailable in Ultrathin TSSOP Package (PW)ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015LinBICMOS is a trademark of Texas Instruments IncorporatedLow rDS(on). . . 0.18Typ at VGS= -10 V3 V CompatibleRequires No External VCCTTL and CMOS Compatible InputsVGS(th)= -1.5 V MaxAvailable in Ultrathin TSSOP Package (PW)ESD Protection Up to 2 kV Per MIL-STD-883C, Method 3015LinBICMOS is a trademark of Texas Instruments Incorporated
Description
AI
The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTMprocess. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on)and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.
Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.
The TPS1100 is a single P-channel enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of Texas Instruments LinBiCMOSTMprocess. With a maximum VGS(th)of -1.5 V and an IDSSof only 0.5 uA, the TPS1100 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on)and excellent ac characteristics (rise time 10 ns typical) make the TPS1100 the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers.
The ultrathin thin shrink small-outline package or TSSOP (PW) version with its smaller footprint and reduction in height fits in places where other P-channel MOSFETs cannot. The size advantage is especially important where board real estate is at a premium and height restrictions do not allow for a small-outline integrated circuit (SOIC) package.
Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards. For existing designs, the D-packaged version has a pinout common with other p-channel MOSFETs in SOIC packages.
Caution. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits.