SUD50 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET P-CH 40V 60A TO252

Part	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	FET Type	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SUD50P04-13L-GE3	3 W 93.7 W	3120 pF	TO-252AA	13 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	-55 °C	175 ░C	95 nC	P-Channel	60 A	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division SUD50N02-09P-GE3		1300 pF	TO-252	14 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20 V	-55 °C	175 ░C		N-Channel	20 A	Surface Mount	20 V	16 nC	39.5 W
Vishay General Semiconductor - Diodes Division SUD50P06-15-BE3	2.5 W 113 W		TO-252AA		3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	60 V	-55 °C	150 °C	165 nC	P-Channel	50 A	Surface Mount	20 V			15 mOhm	4950 pF
Vishay General Semiconductor - Diodes Division SUD50P04-08-BE3	3 W 100 W		TO-252AA	15 mOhm	1 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	-55 °C	175 ░C		P-Channel	50 A	Surface Mount	20 V	130 nC			5400 pF
Vishay General Semiconductor - Diodes Division SUD50N04-8M8P-4BE3	3.1 W 48.1 W	2400 pF	TO-252AA	8.8 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	-55 °C	150 °C	56 nC	N-Channel	14 A 50 A	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division SUD50P10-43L-GE3	8.3 W 136 W	4600 pF	TO-252	43 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 V	-55 °C	175 ░C		P-Channel	37.1 A	Surface Mount	20 V	160 nC
Vishay General Semiconductor - Diodes Division SUD50N04-8M8P-4GE3	3.1 W 48.1 W	2400 pF	TO-252AA	8.8 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	-55 °C	150 °C	56 nC	N-Channel	14 A 50 A	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division SUD50P04-09L-E3	3 W 136 W	4800 pF	TO-252AA	9.4 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	40 V	-55 °C	175 ░C	150 nC	P-Channel	50 A	Surface Mount	20 V
Vishay General Semiconductor - Diodes Division SUD50N024-09P-E3	6.5 W 39.5 W	1300 pF	TO-252AA	9.5 mOhm	3 V	MOSFET (Metal Oxide)	4.5 V 10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	22 V	-55 °C	175 ░C		N-Channel	49 A	Surface Mount	20 V	16 nC
Vishay General Semiconductor - Diodes Division SUD50N10-18P-E3	3 W 136.4 W	2600 pF	TO-252AA		5 V	MOSFET (Metal Oxide)	10 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	100 V	-55 °C	175 ░C		N-Channel	8.2 A 50 A	Surface Mount	20 V	75 nC		18.5 mOhm