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SUD50N10-18P-E3 - TO-252

SUD50N10-18P-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 8.2A/50A TO252

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SUD50N10-18P-E3 - TO-252

SUD50N10-18P-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 100V 8.2A/50A TO252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSUD50N10-18P-E3
Current - Continuous Drain (Id) @ 25°C50 A, 8.2 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]75 nC
Input Capacitance (Ciss) (Max) @ Vds2600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)3 W, 136.4 W
Rds On (Max) @ Id, Vgs [Max]18.5 mOhm
Supplier Device PackageTO-252AA
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

SUD50 Series

N-Channel 100 V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W (Tc) Surface Mount TO-252AA

Documents

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