
SUD50N10-18P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 8.2A/50A TO252
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SUD50N10-18P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 8.2A/50A TO252
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Technical Specifications
Parameters and characteristics for this part
| Specification | SUD50N10-18P-E3 | 
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A, 8.2 A | 
| Drain to Source Voltage (Vdss) | 100 V | 
| Drive Voltage (Max Rds On, Min Rds On) | 10 V | 
| FET Type | N-Channel | 
| Gate Charge (Qg) (Max) @ Vgs [Max] | 75 nC | 
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF | 
| Mounting Type | Surface Mount | 
| Operating Temperature [Max] | 175 ░C | 
| Operating Temperature [Min] | -55 °C | 
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 | 
| Power Dissipation (Max) | 3 W, 136.4 W | 
| Rds On (Max) @ Id, Vgs [Max] | 18.5 mOhm | 
| Supplier Device Package | TO-252AA | 
| Technology | MOSFET (Metal Oxide) | 
| Vgs (Max) | 20 V | 
| Vgs(th) (Max) @ Id | 5 V | 
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUD50 Series
N-Channel 100 V 8.2A (Ta), 50A (Tc) 3W (Ta), 136.4W (Tc) Surface Mount TO-252AA
Documents
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