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SUD50P10-43L-GE3 - TO-252

SUD50P10-43L-GE3

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Vishay General Semiconductor - Diodes Division

MOSFET P-CH 100V 37.1A TO252

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SUD50P10-43L-GE3 - TO-252

SUD50P10-43L-GE3

Active
Vishay General Semiconductor - Diodes Division

MOSFET P-CH 100V 37.1A TO252

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSUD50P10-43L-GE3
Current - Continuous Drain (Id) @ 25°C37.1 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]160 nC
Input Capacitance (Ciss) (Max) @ Vds4600 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)8.3 W, 136 W
Rds On (Max) @ Id, Vgs43 mOhm
Supplier Device PackageTO-252
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.55
10$ 2.12
100$ 1.69
500$ 1.43
1000$ 1.21
Digi-Reel® 1$ 2.55
10$ 2.12
100$ 1.69
500$ 1.43
1000$ 1.21
Tape & Reel (TR) 2000$ 1.15
6000$ 1.11

Description

General part information

SUD50 Series

P-Channel 100 V 37.1A (Tc) 8.3W (Ta), 136W (Tc) Surface Mount TO-252