MOSFET N-CH 60V 90A TO263
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Supplier Device Package | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM90N06-5M5P-E3 | 120 nC | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 90 A | 20 V | -55 °C | 175 ░C | N-Channel | 5.5 mOhm | 3.75 W, 272 W | 60 V | 10 V | Surface Mount | 4700 pF | 4.5 V | ||
Vishay Siliconix SUM90N08-7M6P-E3 | 90 nC | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 90 A | 20 V | -55 °C | 175 ░C | N-Channel | 3.75 W, 150 W | 75 V | 10 V | Surface Mount | 3528 pF | 4.8 V | 7.6 mOhm | ||
Vishay Siliconix SUM90N03-2M2P-E3 | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 90 A | 20 V | -55 °C | 175 ░C | N-Channel | 3.75 W, 250 W | 30 V | 4.5 V, 10 V | Surface Mount | 12065 pF | 2.5 V | 2.2 mOhm | 257 nC | ||
Vishay Siliconix SUM90N06-4M4P-E3 | 160 nC | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | TO-263 (D2PAK) | MOSFET (Metal Oxide) | 90 A | 20 V | -55 °C | 175 ░C | N-Channel | 3.75 W, 300 W | 60 V | 10 V | Surface Mount | 6190 pF | 4.5 V | 4.4 mOhm |