Zenode.ai Logo
Beta
K
SUM90N06-4M4P-E3 - TO-263 (D2Pak)

SUM90N06-4M4P-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 90A TO263

Deep-Dive with AI

Search across all available documentation for this part.

SUM90N06-4M4P-E3 - TO-263 (D2Pak)

SUM90N06-4M4P-E3

Obsolete
Vishay General Semiconductor - Diodes Division

MOSFET N-CH 60V 90A TO263

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSUM90N06-4M4P-E3
Current - Continuous Drain (Id) @ 25°C90 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]160 nC
Input Capacitance (Ciss) (Max) @ Vds6190 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)3.75 W, 300 W
Rds On (Max) @ Id, Vgs4.4 mOhm
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

SUM90 Series

N-Channel 60 V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D2PAK)

Documents

Technical documentation and resources

No documents available