
SUM90N06-4M4P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 90A TO263
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SUM90N06-4M4P-E3
ObsoleteVishay General Semiconductor - Diodes Division
MOSFET N-CH 60V 90A TO263
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | SUM90N06-4M4P-E3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 160 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 6190 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 3.75 W, 300 W |
| Rds On (Max) @ Id, Vgs | 4.4 mOhm |
| Supplier Device Package | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
SUM90 Series
N-Channel 60 V 90A (Tc) 3.75W (Ta), 300W (Tc) Surface Mount TO-263 (D2PAK)
Documents
Technical documentation and resources
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