MOSFET N-CH 30V 90A TO263
| Part | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs (Max) | Mounting Type | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs [Max] | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | 257 nC  | 3.75 W  250 W  | 2.2 mOhm  | 2.5 V  | 12065 pF  | 4.5 V  10 V  | TO-263 (D2PAK)  | MOSFET (Metal Oxide)  | -55 °C  | 175 ░C  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 20 V  | Surface Mount  | N-Channel  | 30 V  | 90 A  | |
Vishay General Semiconductor - Diodes Division  | 3.75 W  300 W  | 4.4 mOhm  | 4.5 V  | 6190 pF  | 10 V  | TO-263 (D2PAK)  | MOSFET (Metal Oxide)  | -55 °C  | 175 ░C  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | 20 V  | Surface Mount  | N-Channel  | 60 V  | 90 A  | 160 nC  |