SUM90N03-2M2P-E3

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 90A TO263

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Vishay General Semiconductor - Diodes Division

MOSFET N-CH 30V 90A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	SUM90N03-2M2P-E3

Current - Continuous Drain (Id) @ 25°C	90 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	257 nC
Input Capacitance (Ciss) (Max) @ Vds	12065 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	250 W, 3.75 W
Rds On (Max) @ Id, Vgs	2.2 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Vgs (Max)	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SUM90N03-2M2P-E3	257 nC	3.75 W 250 W	2.2 mOhm	2.5 V	12065 pF	4.5 V 10 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	Surface Mount	N-Channel	30 V	90 A
Vishay General Semiconductor - Diodes Division SUM90N06-4M4P-E3		3.75 W 300 W	4.4 mOhm	4.5 V	6190 pF	10 V	TO-263 (D2PAK)	MOSFET (Metal Oxide)	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	Surface Mount	N-Channel	60 V	90 A	160 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 90A (Tc) 3.75W (Ta), 250W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources