Catalog
Super Fast Recovery Diode
Description
AI
RFN5BGE6S is the silicon epitaxial planar type Fast Recovery Diode.
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Super Fast Recovery Diode
Super Fast Recovery Diode
| Part | Voltage - Forward (Vf) (Max) | Current - Average Rectified (Io) | Operating Temperature - Junction (Max) | Technology | Current - Reverse Leakage | Package / Case | Package Name | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Speed - Fast Recovery (Maximum) | Speed - Fast Recovery (Minimum) | Mounting Type | Grade | Qualification | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 1.55 V | 5 A | 150 °C | Standard | 10 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | CPD | 600 V | 50 ns | 500 ns | 200 mA | Surface Mount | |||
 Rohm Semiconductor | 1.5 V | 5 A | 150 °C | Standard | 10 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252 | 350 V | 30 ns | 500 ns | 200 mA | Surface Mount | Automotive | AEC-Q101 | |
 Rohm Semiconductor | 980 mV | 5 A | Standard | 10 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252GE | 200 V | 25 ns | 500 ns | 200 mA | Surface Mount | 150 °C | |||
Rohm Semiconductor | 1.55 V | 5 A | Standard | 10 µA | DPAK (2 Leads + Tab) SC-63 TO-252-3 | TO-252GE | 600 V | 50 ns | 500 ns | 200 mA | Surface Mount | 150 °C |