IDK09G65C5XTMA2

Obsolete

Infineon Technologies

DIODE SIL CARB 650V 9A TO263-2

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Obsolete

Infineon Technologies

DIODE SIL CARB 650V 9A TO263-2

Technical Specifications

Parameters and characteristics for this part

Specification	IDK09G65C5XTMA2

Capacitance @ Vr, F	270 pF
Current - Average Rectified (Io)	9 A
Current - Reverse Leakage @ Vr	1.6 mA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	PG-TO263-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.8 V

Part	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Package / Case	Current - Average Rectified (Io)	Capacitance @ Vr, F	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Infineon Technologies IDK09G65C5XTMA2	SiC (Silicon Carbide) Schottky	PG-TO263-2	0 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	9 A	270 pF	No Recovery Time	650 V	1.6 mA	Surface Mount	1.8 V	175 ░C	-55 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 650 V 9A Surface Mount PG-TO263-2

Technical documentation and resources