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DIODE SIL CARB 650V 9A TO263-2
| Part | Technology | Supplier Device Package | Reverse Recovery Time (trr) | Package / Case | Current - Average Rectified (Io) | Capacitance @ Vr, F | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Mounting Type | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | SiC (Silicon Carbide) Schottky | PG-TO263-2 | 0 ns | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 9 A | 270 pF | No Recovery Time | 650 V | 1.6 mA | Surface Mount | 1.8 V | 175 ░C | -55 C |