IPS80R2K4P7AKMA1

Obsolete

Infineon Technologies

MOSFET N-CH 800V 2.5A TO251-3

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Obsolete

Infineon Technologies

MOSFET N-CH 800V 2.5A TO251-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPS80R2K4P7AKMA1

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Input Capacitance (Ciss) (Max) @ Vds	150 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	22 W
Rds On (Max) @ Id, Vgs	2.4 Ohm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPS80R2K0P7AKMA1	9 nC	2 Ohm	MOSFET (Metal Oxide)	N-Channel	24 W	Through Hole	20 V	10 V	800 V	3.5 V	TO-251-3 Stub Leads IPAK	-55 °C	150 °C	3 A	PG-TO251-3-342	175 pF
Infineon Technologies IPS80R2K4P7AKMA1		2.4 Ohm	MOSFET (Metal Oxide)	N-Channel		Through Hole	20 V	10 V	800 V	3.5 V	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	150 °C	2.5 A	PG-TO251-3	150 pF	22 W	7.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 2.5A (Tc) 22W (Tc) Through Hole PG-TO251-3

Technical documentation and resources