IPS80R2 Series

Catalog

TRANS MOSFET N-CH 800V 3A 3-PIN(3+TAB) TO-251 TUBE

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Technology	FET Type	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Infineon Technologies IPS80R2K0P7AKMA1	9 nC	2 Ohm	MOSFET (Metal Oxide)	N-Channel	24 W	Through Hole	20 V	10 V	800 V	3.5 V	TO-251-3 Stub Leads IPAK	-55 °C	150 °C	3 A	PG-TO251-3-342	175 pF
Infineon Technologies IPS80R2K4P7AKMA1		2.4 Ohm	MOSFET (Metal Oxide)	N-Channel		Through Hole	20 V	10 V	800 V	3.5 V	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	150 °C	2.5 A	PG-TO251-3	150 pF	22 W	7.5 nC