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IRF6795MTRPBF - DirectFET™ Isometric MX_B

IRF6795MTRPBF

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.8 MOHM; SCHOTTKY

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IRF6795MTRPBF - DirectFET™ Isometric MX_B

IRF6795MTRPBF

Obsolete
Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.8 MOHM; SCHOTTKY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF6795MTRPBF
Current - Continuous Drain (Id) @ 25°C160 A, 32 A
Drain to Source Voltage (Vdss)25 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]53 nC
Input Capacitance (Ciss) (Max) @ Vds4280 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / CaseDirectFET™ Isometric MX
Power Dissipation (Max)75 W, 2.8 W
Rds On (Max) @ Id, Vgs1.8 mOhm
Supplier Device PackageDIRECTFET™ MX
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.35 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 268$ 1.12
268$ 1.12
Cut Tape (CT) 1$ 3.16
1$ 3.16
10$ 2.05
10$ 2.05
100$ 1.42
100$ 1.42
500$ 1.15
500$ 1.15

Description

General part information

IRF6795 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources