STRONGIRFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 1.8 MOHM; SCHOTTKY
| Part | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | DIRECTFET™ MX | DirectFET™ Isometric MX | 2.35 V | 4280 pF | 1.8 mOhm | 53 nC | 4.5 V 10 V | N-Channel | 20 V | 32 A 160 A | Surface Mount | 150 °C | -40 °C | MOSFET (Metal Oxide) | 25 V | 2.8 W 75 W |
Infineon Technologies | DIRECTFET™ MX | DirectFET™ Isometric MX | 2.35 V | 4280 pF | 1.8 mOhm | 53 nC | 4.5 V 10 V | N-Channel | 20 V | 32 A 160 A | Surface Mount | 150 °C | -40 °C | MOSFET (Metal Oxide) | 25 V | 2.8 W 75 W |