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DMT35M8LDG-7 - Package Image for PowerDI3333-8

DMT35M8LDG-7

Active
Diodes Inc

ASYMMETRIC DUAL N-CHANNEL MOSFET

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DMT35M8LDG-7 - Package Image for PowerDI3333-8

DMT35M8LDG-7

Active
Diodes Inc

ASYMMETRIC DUAL N-CHANNEL MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT35M8LDG-7
Configuration2 N-Channel (Dual) Asymmetrical
Current - Continuous Drain (Id) @ 25°C17 A, 15.3 A
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs16.3 nC
Gate Charge (Qg) (Max) @ Vgs [Max]22.7 nC
Input Capacitance (Ciss) (Max) @ Vds1510 pF, 1032 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power - Max980 mW, 2 W
Rds On (Max) @ Id, Vgs5.8 mOhm, 4.7 mOhm
Supplier Device PackagePowerDI3333-8 (Type G)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.9 V

DMT35M8LDG Series

Asymmetric Dual N-Channel MOSFET

PartPackage / CaseInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdOperating Temperature [Min]Operating Temperature [Max]Drain to Source Voltage (Vdss)TechnologyPower - MaxSupplier Device PackageConfigurationGate Charge (Qg) (Max) @ VgsGate Charge (Qg) (Max) @ Vgs [Max]Mounting TypeRds On (Max) @ Id, Vgs
Diodes Inc
8-PowerVDFN
1032 pF
1510 pF
15.3 A
17 A
1.9 V
-55 °C
150 °C
30 V
MOSFET (Metal Oxide)
2 W
980 mW
PowerDI3333-8 (Type G)
2 N-Channel (Dual) Asymmetrical
16.3 nC
22.7 nC
Surface Mount
4.7 mOhm
5.8 mOhm
Diodes Inc
8-PowerVDFN
1032 pF
1510 pF
15.3 A
17 A
1.9 V
-55 °C
150 °C
30 V
MOSFET (Metal Oxide)
2 W
980 mW
PowerDI3333-8 (Type G)
2 N-Channel (Dual) Asymmetrical
16.3 nC
22.7 nC
Surface Mount
4.7 mOhm
5.8 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.51
10$ 0.95
100$ 0.64
500$ 0.50
1000$ 0.46
Digi-Reel® 1$ 1.51
10$ 0.95
100$ 0.64
500$ 0.50
1000$ 0.46
Tape & Reel (TR) 2000$ 0.42
4000$ 0.39
6000$ 0.37
10000$ 0.37

Description

General part information

DMT35M8LDG Series

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.