Technical Specifications
Parameters and characteristics for this part
| Specification | DMT35M8LDG-13 |
|---|---|
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Current - Continuous Drain (Id) @ 25°C | 17 A, 15.3 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.3 nC |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 22.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF, 1032 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerVDFN |
| Power - Max | 980 mW, 2 W |
| Rds On (Max) @ Id, Vgs | 5.8 mOhm, 4.7 mOhm |
| Supplier Device Package | PowerDI3333-8 (Type G) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.9 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 0.40 | |
| 6000 | $ 0.37 | |||
| 9000 | $ 0.37 | |||
Description
General part information
DMT35M8LDG Series
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources