DMTH45M5SFVW-13

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Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH45M5SFVW-13

Active

Diodes Inc

40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH45M5SFVW-13

Current - Continuous Drain (Id) @ 25°C	18 A, 71 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1083 pF
Mounting Type	Wettable Flank, Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	3.5 W, 51 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	PowerDI3333-8 (SWP) Type UX
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

DMTH45M5SFVW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMTH45M5SFVW-13	5.5 mOhm	20 V	PowerDI3333-8 (SWP) Type UX	10 V	N-Channel	8-PowerVDFN	1083 pF	3.5 W 51 W	MOSFET (Metal Oxide)	3.5 V	18 A 71 A	-55 °C	175 ░C	Surface Mount Wettable Flank	40 V	13.2 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	3000	$ 0.28
		6000	$ 0.26
		9000	$ 0.25
		15000	$ 0.24

Description

General part information

DMTH45M5SFVW Series

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.