DMTH45M5SFVW Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Rds On (Max) @ Id, Vgs	Vgs (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMTH45M5SFVW-13	5.5 mOhm	20 V	PowerDI3333-8 (SWP) Type UX	10 V	N-Channel	8-PowerVDFN	1083 pF	3.5 W 51 W	MOSFET (Metal Oxide)	3.5 V	18 A 71 A	-55 °C	175 ░C	Surface Mount Wettable Flank	40 V	13.2 nC

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Excellent Qgdx RDS(ON)Product (FOM)

• Wettable Flank for Improved Optical Inspection

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH45M5SFVWQ)

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.