STB100N6F7

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STMicroelectronics

N-CHANNEL 60 V, 4.7 MOHM TYP., 100 A STRIPFET F7 POWER MOSFET IN A D2PAK PACKAGE

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DocumentsAN4337 TN1224 +14

STB100N6F7

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STMicroelectronics

N-CHANNEL 60 V, 4.7 MOHM TYP., 100 A STRIPFET F7 POWER MOSFET IN A D2PAK PACKAGE

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Technical Specifications

Parameters and characteristics for this part

Specification	STB100N6F7

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30 nC
Input Capacitance (Ciss) (Max) @ Vds	1980 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs [Max]	5.6 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STB100N10F7 Series

N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package

Part	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology
STMicroelectronics STB100N6F7	30 nC	100 A	60 V	Surface Mount	1980 pF	5.6 mOhm	-55 °C	175 ░C	4 V	20 V	125 W	TO-263 (D2PAK)	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)
STMicroelectronics STB100N10F7	61 nC		100 V	Surface Mount	4369 pF		-55 °C	175 ░C	4.5 V	20 V	150 W	TO-263 (D2PAK)	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.79
		10	$ 1.49
		100	$ 1.18
		500	$ 1.00
	Digi-Reel®	1	$ 1.79
		10	$ 1.49
		100	$ 1.18
		500	$ 1.00
	Tape & Reel (TR)	1000	$ 0.85
		2000	$ 0.81
		5000	$ 0.78
		10000	$ 0.75

Description

General part information

STB100N10F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

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Technical documentation and resources

STB100N6F7

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STB100N6F7

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Technical Specifications

STB100N10F7 Series

Pricing

Description

STB100N10F7 Series

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Datasheet

STB100N10F7 Series