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STB100N10F7 - ROHM RBR10NS40AFHTL

STB100N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0068 OHM TYP., 80 A STRIPFET F7 POWER MOSFET IN D2PAK PACKAGE

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Search across all available documentation for this part.

DocumentsProduct Change Notice ENTechnical Data Sheet EN+17
STB100N10F7 - ROHM RBR10NS40AFHTL

STB100N10F7

Active
STMicroelectronics

N-CHANNEL 100 V, 0.0068 OHM TYP., 80 A STRIPFET F7 POWER MOSFET IN D2PAK PACKAGE

Deep-Dive with AI

DocumentsProduct Change Notice ENTechnical Data Sheet EN+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB100N10F7
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs61 nC
Input Capacitance (Ciss) (Max) @ Vds4369 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)150 W
Supplier Device PackageTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.54
10$ 2.31
100$ 1.77
500$ 1.44
Digi-Reel® 1$ 3.54
10$ 2.31
100$ 1.77
500$ 1.44
Tape & Reel (TR) 1000$ 1.18
2000$ 1.14
NewarkEach (Supplied on Cut Tape) 1$ 4.19
10$ 2.96
25$ 2.76
50$ 2.56

Description

General part information

STB100N10F7 Series

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.