BSZ009NE2LS5ATMA1

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Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 0.9 MOHM; ORING/EFUSE

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BSZ009NE2LS5ATMA1

Active

Infineon Technologies

OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 0.9 MOHM; ORING/EFUSE

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Technical Specifications

Parameters and characteristics for this part

Specification	BSZ009NE2LS5ATMA1

Current - Continuous Drain (Id) @ 25°C	39 A, 40 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	124 nC
Input Capacitance (Ciss) (Max) @ Vds	5500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	69 W, 2.1 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	PG-TSDSON-8-34
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	2 V

BSZ009 Series

Part	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C
Infineon Technologies BSZ009NE2LS5ATMA1	8-PowerVDFN	900 mOhm	2.1 W 69 W	PG-TSDSON-8-34	4.5 V 10 V	N-Channel	5500 pF	16 V	124 nC	-55 °C	150 °C	Surface Mount	25 V	MOSFET (Metal Oxide)	2 V	39 A 40 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.57
		10	$ 2.32
		25	$ 2.07
		100	$ 1.86
		250	$ 1.66
		500	$ 1.45
		1000	$ 1.20
	Digi-Reel®	1	$ 2.57
		10	$ 2.32
		25	$ 2.07
		100	$ 1.86
		250	$ 1.66
		500	$ 1.45
		1000	$ 1.20
	Tape & Reel (TR)	5000	$ 1.02
Newark	Each (Supplied on Cut Tape)	1	$ 1.94
		10	$ 1.67
		25	$ 1.58
		50	$ 1.52
		100	$ 1.46
		250	$ 1.37
		500	$ 1.32
		1000	$ 1.27

Description

General part information

BSZ009 Series

Infineon extends its’ high performance MOSFET portfolio with BSZ009NE2LS5 OptiMOS™ 5 25V power MOSFET in the small PQFN 3.3x3x3 mm package. This device offers industry’s lowest RDS(on)of 0.9mΩ at 10V and is targeting mainly Or-ing and load switching applications.

Documents

Technical documentation and resources

No documents available