Beta
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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 25 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 0.9 MOHM; ORING/EFUSE
| Part | Package / Case | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | Drain to Source Voltage (Vdss) | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PowerVDFN | 900 mOhm | 2.1 W 69 W | PG-TSDSON-8-34 | 4.5 V 10 V | N-Channel | 5500 pF | 16 V | 124 nC | -55 °C | 150 °C | Surface Mount | 25 V | MOSFET (Metal Oxide) | 2 V | 39 A 40 A |